摘要
用等离子体增强化学汽相沉积(PECVD)法,在玻璃和单晶Si衬底上分别制备了氢化纳米硅薄膜,对在相同工艺条件下的薄膜进行了对比研究,即用Raman散射谱研究了薄膜的晶粒平均大小和晶态比;用台阶仪测试了薄膜厚度;用X射线衍射谱和原子力显微镜对薄膜微结构和形貌进行了对比研究,发现所制备薄膜的微观结构有很大的差异。相同工艺条件下,在玻璃衬底上生长的薄膜,表面粗糙度小于单晶Si衬底上的薄膜,而晶化程度低于单晶Si衬底。掺杂使微结构发生了变化,掺P促进晶化,掺B促进非晶化,对此实验结果给出了定性的分析。
Three types,including the intrinsic,P-doped and B-doped,of hydrogen-terminated nano-crystalline silicon（nc-Si∶H） films were grown by RF plasma enhanced chemical vapor deposition（PECVD） on substrates of glass and Si wafer,respectively.The impacts of the film growth conditions on its microstructures were characterized with X-ray diffraction,Raman spectroscopy,and atomic force microscopy.The results show that the substrate materials and impurity-doping strongly affects the microstructures of the films.For example,the nc-Si∶H film on the glass substrate has a smother surface,but a less crystallization than those of the control films on the Si substrate.Besides,P-doping increases crystalline phase,whereas,B-doping enhances amorphous phase.Possible mechanism was also tentatively discussed.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2011年第3期267-271,共5页
Chinese Journal of Vacuum Science and Technology
基金
江苏省摩擦学重点实验室开放基金资助(kjsmcx0906)
江苏大学校基金资助项目(09JDG045)
中国博士后科学基金特别资助项目(201003557)
关键词
纳米硅薄膜
RAMAN光谱
表面粗糙度
晶态比
Nano-crystalline silicon film
Raman scattering
Roughness
Crystalline volume fraction
作者简介
联系人：Tel：13912459941；E-mail：wangquan100@126．com
