摘要
利用等离子体增强化学气相沉积技术制备了a-Si:H/SiO2多量子阱结构材料.对a-Si:H/SiO2多量子阱样品分别进行了3种不同的热处理,其中样品经1100℃高温退火可获得尺寸可控的nc-Si:H/SiO2量子点超晶格结构,其尺寸与非晶硅子层厚度相当.比较了a-Si:H/SiO2多量子阱材料与相同制备工艺条件下a-Si:H材料的吸收系数,在紫外/可见短波段前者的吸收系数明显增大,光学吸收边蓝移,说明该材料具有明显的量子尺寸效应,验证了采用a-Si:H/SiO2多量子阱结构来提高太阳能电池光电转换效率的可行性.另外,尺寸可控的nc-Si:H/SiO2量子点超晶格结构的形成,为纳米硅新结构太阳能电池的研究和制备奠定了基础.
a-Si：H/SiO2 multiple quantum wells（QWs） are fabricated by plasma enhanced chemical vapor deposition（PECVD） and subsequent different thermal annealing.Among them the annealed sample under 1100 ℃ in vacuum can be transferred into nc-Si：H/SiO2 QWs,and the size of formed nc-Si：H is controllable and it matches the thickness of a-Si：H sublayer.The optical absorptivity of a-Si：H/SiO2 QWs is compared with that of a-Si：H under the same fabrication condition,the former is higher evidently in the UV/Visible spectrum with the absorption edge blue-shifted,which shows that a-Si：H/SiO2 QWs has an obvious quantum confinement effect.So it is feasible to use a-Si：H/SiO2 QWs to enhance the efficiency of silicon solar cells.In addition,the formation of nc-Si：H/SiO2 QWs with controllable size built the basis for new-type nanocrystalline silicon solar cells.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2011年第6期743-747,共5页
Acta Physica Sinica
基金
上海市自然科学基金(批准号:09ZR1430100)资助的课题~~
关键词
多量子阱
量子限制效应
光学吸收
能带结构
multiple quantum wells
quantum confinement effect
optical absorption
energy band structure
作者简介
E—mail：mxf407@sohu．com
