摘要
介绍了射频高功率放大器设计中RF LDMOS器件的预匹配和匹配技术。针对一款高功率RF LDMOS-FET,在器件法兰封装内为其设计了预匹配电路,并在PCB板级对其进行了输入输出匹配电路的设计,使其在工作频带内较好地匹配到50Ω的系统参考阻抗上。仿真及测试结果表明,当频率为950 MHz时,该RF LDMOS功放的P-1 dB达到了48.8 dBm,直流到射频信号的转换效率达到了66.4%,功率增益在17.8 dB左右,IM3基本处在-30dBc以下,同时在整个869～960 MHz工作频带内,其S11小于-10 dB。
This paper presents the pre-matching and matching approach to RF LDMOS device for designing of high-power RF amplifier.A pre-matching circuit in flange and an input/output matching circuit on PCB have been developed for one RF LDMOSFET,so that it can be matched to the systemic reference impedance of 50 Ω within a given frequency range.The simulation and measured results show that this RF LDMOS amplifier exhibits a P-1 dB of 48.8 dBm at 950 MHz.Its DC to RF efficiency is up to 66.4%.Power gain is around 17.8 dB.And IM3 is below -30 dBc,while the S11 is less than-10 dB across the frequency range of 869～960 MHz.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2011年第2期159-164,共6页
Research & Progress of SSE
基金
国家自然科学基金资助项目(69801003)
作者简介
王锋（WANG Feng）男，1985年生，东南大学苏州研究院硕士研究生，主要研究方向：微波单片集成电路设计。联系作者：E-mail：zixuan19861002@126．com
