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碳化硅表面镀钴的电磁屏蔽效能研究

The Electromagnetic Shielding Effectiveness of SiC with Cobalt Coating by Electroless Plating
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摘要 本文将碳化硅经过预处理(除油-粗化-敏化-活化-还原)后分别在不同的pH值(9、10、11)的镀液中进行化学镀钴,镀液温度为80℃,施镀时间为60 min。研究镀液的不同pH值对试样电磁屏蔽效能的影响。结果表明:镀液的pH值为10时获得的镀钴碳化硅,在11GHz屏蔽效能达到最大,其值为8.4dB。 After silicon carbide was pretreated (degreasing -- coarsening -- sensitization -- activation - reduction) , the silicon carbide was coated cobalt by electroless plating at pH=9, 10, 11, respectively, with a plating temperature 80℃ and plating time 60min. The effect of bath pH value on the electromagnetic shielding effectiveness of sample was studied. The results showed that the electromagnetic shielding effectiveness of the sample was best (8.4dB) at 11GHz, which the sample was obtained at pH value (10).
作者 谭宏斌
出处 《山东陶瓷》 CAS 2011年第1期14-16,共3页 Shandong Ceramics
关键词 碳化硅 化学镀 电磁屏蔽效能 SiC Electroless Plating Cobalt Electromagnetic Shielding Effectiveness
作者简介 谭宏斌(1977-),男,讲师,硕士,研究方向:无机功能材料
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