期刊文献+

Optoelectronic characterisation of an individual ZnO nanowire in contact with a micro-grid template 被引量:5

Optoelectronic characterisation of an individual ZnO nanowire in contact with a micro-grid template
在线阅读 下载PDF
导出
摘要 Optoelectronic characterisation of an individual ZnO nanowire in contact with a micro-grid template has been studied. The low-cost micro-grid template made by photolithography is used to fabricate the ohmic contact metal electrodes. The current increases linearly with the bias, indicating good ohmic contacts between the nanowire and the electrodes. The resistivity of the ZnO nanowire is calculated to be 3.8 Ω·cm. We investigate the photoresponses of an individual ZnO nanowire under different light illumination using light emitting diodes (λ= 505 nm, 460 nm, 375 nm) as excitation sources in atmosphere. When individual ZnO nanowire is exposured to different light irradiation, we find that it is extremely sensitive to UV illumination; the conductance is much larger upon UV illumination than that in the dark at room temperature. This phenomenon may be related to the surface oxygen molecule adsorbtion, which indicates their potential application to the optoelectronic switching device. Optoelectronic characterisation of an individual ZnO nanowire in contact with a micro-grid template has been studied. The low-cost micro-grid template made by photolithography is used to fabricate the ohmic contact metal electrodes. The current increases linearly with the bias, indicating good ohmic contacts between the nanowire and the electrodes. The resistivity of the ZnO nanowire is calculated to be 3.8 Ω·cm. We investigate the photoresponses of an individual ZnO nanowire under different light illumination using light emitting diodes (λ= 505 nm, 460 nm, 375 nm) as excitation sources in atmosphere. When individual ZnO nanowire is exposured to different light irradiation, we find that it is extremely sensitive to UV illumination; the conductance is much larger upon UV illumination than that in the dark at room temperature. This phenomenon may be related to the surface oxygen molecule adsorbtion, which indicates their potential application to the optoelectronic switching device.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第3期416-419,共4页 中国物理B(英文版)
基金 supported by the National Natural Science Foundation of China (Grant Nso. 60776010,60940021 and 11074060) the Natural Science Foundation of Heilongjiang Province,China (Grant No. A2008-07) the Doctoral Start-up Fund of Harbin Normal University,China
关键词 ZnO nanowire OPTOELECTRONIC micro-grid template ZnO nanowire, optoelectronic, micro-grid template
作者简介 Corresponding author. E-mail: gaohong65cn@yahoo.com.cnCorresponding author. E-mail: xulingling.hit@163.com
  • 相关文献

参考文献20

  • 1Ved P V, Hoonha J, Sookhyun H, Minhyon J and Won- bong C 2008 Nanotechnology 7 6.
  • 2Sunghoon S, Woong K H, Soon S K and Takhee L 2008 Appl. Phys. Lett. 92 263109.
  • 3Fu X J, Zhang H Y, Guo C X, Xu J B and Li M 2009 Journal of Semiconductors 30 8.
  • 4Li Y Y, Cheng C W, Dong X, Gao J S and Zhang H Q 2009 Journal of Semiconductors 30 6.
  • 5Zhou J, Gu Y D, Hu Y F, Mai W J, Ping H Y, Bao G, Ashok K S, Dennis L P and Wang Z L 2009 Appl. Phys. Lett. 94 191103.
  • 6Shoou J C, Ting J H, Cheng L H, Lin Y R, I C C and Bohr R H 2008 Nanotechnology 19 095505.
  • 7Cheng C W, Xu G Y, Zhang H Q and Y L 2007 J. Nanosci. Nanotechnol. 7 12.
  • 8Wan Q, Li Q H, C Y J and W T H 2004 Appl. Phys. Lett. 84 18.
  • 9Liu Y, Zhang Z Y, Xu H L, Zhang L H, Wang Z X, Li W L, Li D, Hu Y F, Gao M, Li Q and Peng L M 2009 J. Phys. Chem. C 113 16796.
  • 10Guo Z, Zhao D X, Liu Y C, Shen D Z, Zhang J Y and Li B H 2008 Appl. Phys. Lett. 93 163501.

同被引文献10

引证文献5

二级引证文献5

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部