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RSD重复频率脉冲功率电路的研制 被引量:3

Development of Repetitive Pulse Power Circuit Based on Reversely Switched Dynistor
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摘要 研制了一种基于高速大功率半导体脉冲开关反向开关晶体管(Reversely Switched Dynistor,简称RSD)的重复频率脉冲功率电路,电路主要包括放电电容充电回路、主回路及RSD预充回路等部分。分析了脉冲功率电路及磁开关工作原理。设计了工作电压为2.4 kV时的电路及磁开关参数。试验结果表明,当重复频率为10 Hz时,RSD输出电流峰值为2.44 kA,脉宽为9μs,工作频率从10 Hz增加至60 Hz时,输出电流从2.44 kA下降至2.21 kA,变化率为4.5%。 A kind of repetitive pulse power circuit based on high-speed pulse power semiconductor switch reversely switched dynistor(RSD) is developed, the circuit is assembled by charge circuit of discharge capacitance, main circuit and trigger circuit of RSD.Repetitive pulse power circuit and magnetic switch are analyzed.The parameters of circuit and magnetic switch are designed with the operation voltage of 2.4 kV.The experimental results provide that under operation condition of 10 Hz of pulse discharge frequency ,the experimental peak current is 2.44 kA with 9 μs pulse width, when the pulse discharge frequency changes from 10-60 Hz, the peak current decreases from 2.44-2.21 kA, the decrease percent is 4.5%.
出处 《电力电子技术》 CSCD 北大核心 2011年第2期69-71,共3页 Power Electronics
基金 国家自然科学基金资助项目(50907025)~~
关键词 反向开关晶体管 脉冲功率开关 脉冲功率电路 reversely switched dynistor pulse power switch pulse power circuit
作者简介 彭亚斌(1975-),男,湖北武汉人,博士研究生,研究方向为脉冲功率器件及应用。
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  • 1朱士全.冲击试验回路杂散电容的估算与实测[J].变压器,1994,31(10):21-24. 被引量:20
  • 2余岳辉,梁琳,李谋涛,刘玉华,刘璐.超高速半导体开关RSD的开通机理与大电流特性研究[J].电工技术学报,2005,20(2):36-40. 被引量:23
  • 3方健,蒋华平,乔明,张波,李肇基.局域寿命控制NPT-IGBTs稳态模型[J].Journal of Semiconductors,2006,27(5):857-863. 被引量:1
  • 4I V Grekhov.New Principles of High Power Switching with Semiconductor Device.Solid-State Electronics [J].1989,32( 11 ): 923~930.
  • 5Bezuglov V G,Galakhov I V, Gudov S N,et al. On the possible use of semiconductor RSD-based switch for flashlamps drive circuits in a Nd-glass laser amplifier of LMJ facility. 12th IEEE International Pulsed Power Conference, 1999,12: 914
  • 6Grekhov I. Theory of quasi-diode operation of reversely switched dynistors. Solid-State Electron, 1988,31(10) : 1483
  • 7Baron R,Marsh 0 J,Mayer J W. Transient response of double injection in a semiconductor of finite cross section. J Appl Phys,1966,37(7):2614
  • 8Okuto Y,Crowell C R. Threshold energy effect on avalanche breakdown voltage in semiconductor junctions. Solid-State Electron, 1975,18(2) : 161
  • 9Sclangenotto H, Gerlach W. On the effective carrier lifetime in p-s-n rectifiers at high injection levels. Solid-State Electron, 1969,12:267
  • 10Redfern D, Campbell C. The Matlab 5 Handbook. New York: Springer, 1998

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