摘要
利用二次曝光法，在外力作用下对以（１００）面单晶硅为样品所构造的四点简支梁模型的应变进行了测量，并分析了样品的主应力，从而得出该样品的一个弹性常数，对反应应力与应变关系的弹性矩阵示性曲面进行了初步探索。
By double exposure,we have measured strains in silicon wafers.This experiment based on the four concentration forces exposed the relation of main stress and strain.We concluded one elasticity coefficient of this silicon wafer and studied the curved surface Showing quality of elasticity matrix which shows the relation of stress and strain.
出处
《激光杂志》
CAS
CSCD
北大核心
1999年第4期24-25,共2页
Laser Journal
