摘要
本文利用化学共沉淀法分别制得Ｚｎ５（ＣＯ３）２（ＯＨ）６ 掺杂Ａｌ（ＯＨ）３、Ｍｇ（ＯＨ）２ 以及Ｚｎ５（ＣＯ３）２（ＯＨ）６ 掺杂Ｓｂ（ＯＨ）３、Ｂｉ（ＯＨ）３、Ｓｎ（ＯＨ）４、Ｃｏ（ＯＨ）３、ＭｎＯ（ＯＨ）２ 两种复合粉体，利用高频等离子体焙解新工艺，制得了纳米ＺｎＯ 及相应的添加剂陶瓷复合粉体．ＴＥＭ 分析结果表明：两种陶瓷复合粉体的粒径均小于１００ｎｍ ．利用前者，通过添加适当的Ａｌ２Ｏ３ 和ＭｇＯ，制备出了电阻率约１０～２０００Ω·ｃｍ ，Ｖ－Ｉ特性较好的ＺｎＯ 线性陶瓷电阻．利用后者，通过适当的杂质配比，在１０００℃左右烧结，可获得致密的瓷体，压敏电压可达４８０Ｖ／ｍ ｍ 左右，非线性系数可达５２．
In this paper,two kinds of composite powders (Zn\-5(CO\-3)\-2(OH)\-6+Al(OH)\-3+Mg(OH)\-2 and Zn\-5(CO\-3)\-2(OH)\-6+Sb(OH)\-3+Bi(OH)\-3+Sn(OH)\-4+Co(OH)\-3+MnO(OH)\-2) have been prepared respectively by the chemical coprecipitation method. The new calcined technology adopted high frequency plasma is used to prepare nanometer ZnO ceramic powders with correspond additives.The analytical results of TEM proved that particle sizes of both kinds of composite powders are below 100nm. Adding some amount of Al\-2O\-3 and MgO in ZnO ceramics, the ZnO linear ceramic resistor with resistivity of 10~2000Ω·cm is prepared, which had good V\|I characteristic.The compressed ceramic body is made by calcining the second composite powder at 1000℃ 2h,the sensitive potential may reach 480V/mm and nonlinear coefficient may be 52.
