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Thermal stability improvement of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations using non-uniform finger spacing 被引量:1

Thermal stability improvement of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations using non-uniform finger spacing
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摘要 A method of non-uniform finger spacing is proposed to enhance thermal stability of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations. Temperature distribution on the emitter fingers of a multi-finger SiGe heterojunction bipolar transistor is studied using a numerical electro-thermal model. The results show that the SiGe heterojunction bipolar transistor with non-uniform finger spacing has a small temperature difference between fingers compared with a traditional uniform finger spacing heterojunction bipolar transistor at the same power dissipation. What is most important is that the ability to improve temperature non-uniformity is not weakened as power dissipation increases. So the method of non-uniform finger spacing is very effective in enhancing the thermal stability and the power handing capability of power device. Experimental results verify our conclusions. A method of non-uniform finger spacing is proposed to enhance thermal stability of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations. Temperature distribution on the emitter fingers of a multi-finger SiGe heterojunction bipolar transistor is studied using a numerical electro-thermal model. The results show that the SiGe heterojunction bipolar transistor with non-uniform finger spacing has a small temperature difference between fingers compared with a traditional uniform finger spacing heterojunction bipolar transistor at the same power dissipation. What is most important is that the ability to improve temperature non-uniformity is not weakened as power dissipation increases. So the method of non-uniform finger spacing is very effective in enhancing the thermal stability and the power handing capability of power device. Experimental results verify our conclusions.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第1期667-671,共5页 中国物理B(英文版)
基金 Project supported by the National Natural Science Foundation of China(Grant Nos.60776051,61006059and61006044) the Beijing Municipal Natural Science Foundation,China(Grant No.4082007) the Beijing Municipal Education Committee,China(Grant Nos.KM200710005015and KM200910005001)
关键词 heterojunction bipolar transistor thermal coupling power dissipation heterojunction bipolar transistor, thermal coupling, power dissipation
作者简介 Corresponding author. E-mail: 30750574@163.com
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