摘要
利用变频导纳谱研究了Ｈｇ１－ｘＣｄｘＴｅ（ｘ＝０．６）ｎ＋－ｏｎ－ｐ结中的深能级缺陷，得到其缺陷能级位置在价带上０．１５ｅＶ，同时给出了其俘获截面和缺陷密度，初步认为是Ｈｇ空位或与其相关的复合缺陷．根据深能级的有关参数，估算了器件的少子寿命和器件优值参数Ｒ０Ａ．
The defect levels in Hg 1 x Cd x Te( x =0.6)n + on p junction photodiodes were studied by using the admittance spectroscopy. Measurements identified a hole trap located at 0.15eV above the valence band. The trap density and majority carrier capture cross section were given, with results suggecting hole capture at a neutral trapping center. It was estimated as a Hg vacancy or some composite defects related with it. The minority lifetime of the devices and the product R 0A of area times the dynamic resistance at zero bias were calculated and the results were discussed, too.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
1999年第2期108-112,共5页
Journal of Infrared and Millimeter Waves
基金
国家科技预研基金
