摘要
采用溶液化学法实现了在Zn(NO3)2/C6H12N4混合溶液中ZnO纳米线在AZO薄膜修饰过衬底上生长。AZO薄膜由射频磁控溅射法制备,通过溅射时间和基底温度的变化改变薄膜形态,重点研究了不同薄膜形态对ZnO纳米线形貌和结构的影响,最终在溅射2h、基底温度250℃晶种上得到垂直于衬底、高度平行取向的ZnO纳米线阵列。在此基础上研究了不同形貌ZnO纳米线阵列的紫外光电导性能差异。结果表明,垂直生长的纳米线较倒伏纳米线紫外响应迅速,分析认为是紫外光照下曝光面积不同造成的。
ZnO nanowires are fabricated on substrate coated with AZO thin film in Zn（NO3 ）2/C6 H12 N4 mixture using solution chemical method. AZO films are prepared by radiofrequency （RF） magnetron sputter deposition with different sputtering time and substrate temperature to change the growth state of the film. The effects of the states of the films on the morphology and structure of ZnO nanowires are focused, and the results show that, sputtering for 2 hours at substrate temperature of 250℃, well-ligned ZnO nanowires oriented perpendicular to the substrate are synthesized Based on the previous research, UV photoconductive properties of ZnO nanowires with different morpholo- gies are investigated. The results show that because of the different areas exposed to UV irradiation, the vertically aligned nanowire arrays respond faster than the lodging ones.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2010年第20期81-85,共5页
Materials Reports
基金
四川省应用基础项目(07JY029-087)
作者简介
曹东：男，1983年生，硕士，主要从事功能材料与器件研究E-mail：caodong001@qq.com
