摘要
单行载流子光电二极管与共振隧穿二极管单片集成器件是一种新型高速光电探测器,也是高速光电单稳双稳转换逻辑电路的一个基本单元。用Atlas软件对该集成电路单元进行了直流和交流特性的模拟研究,模拟得到的3dB带宽最高可达9THz。模拟发现,光照强度、吸收层厚度、掺杂浓度、收集层浓度是影响器件3dB带宽的主要因素。研究了器件材料参数、结构参数与器件3dB带宽之间的关系,并得到在现行工艺下优化后的单行载流子光电二极管和共振隧穿二极管单片集成器件的工艺参数,模拟出3dB带宽为1.03THz。同时,对器件模拟和半导体工艺间的误差进行了分析和估计。这一工作为单行载流子光电二极管和共振隧穿二极管单片集成器件的设计和研制提供了工艺参数基础。
Uni-travelling-carrier photodiode and resonant tunneling diode monolithic integration is a novel high speed photodetector and is also a basic cell of high speed photoelectric circuit monostable-bistable transition logic element. This paper gives the DC and AC simulation results of this monolithic integration cell by using ATLAS software, whose 3 dB bandwidth reaches 9 THz highest. Through the simulation, light intensity, the thickness and doping concentration of absorption layer and collector layer can make a great influence on 3 dB bandwidth of this monolithic integration cell. The relationship between the material parameters and 3 dB bandwidth is revealed and the optimization result is given, then the simulated 3 dB bandwidth reaches 1.03 THz. The error analysis between the simulation and technique realization is also given in this paper. This work can establish the process parameter foundation of unitravelling-carrier photodiode and resonant tunneling diode monolithic integration design and realization.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2010年第3期353-357,468,共6页
Research & Progress of SSE
基金
国家自然科学基金重点项目(60736035)
作者简介
联系作者：毛旭瑞（MAO Xurui）男，1984年生，硕士研究生，研究方向：微纳米测试技术。E-mail：maoxurui@126．com
