摘要
在n型4H-SiC单晶导电衬底上制备了具有MPS(merged p-i-n Schottky diode)结构和JTE(junction termination extension)结构的肖特基势垒二极管。通过高温离子注入及相应的退火工艺,进行了区域性p型掺杂,形成了高真空电子束蒸发Ni/Pt/Au复合金属制备肖特基接触,衬底溅射Ti W/Au并合金做欧姆接触,采用场板和JTE技术减小高压电场集边效应。该器件具有良好的正向整流特性和较高的反向击穿电压。反向击穿电压可以达到1300V,开启电压约为0.7V,理想因子为1.15,肖特基势垒高度为0.93eV,正向电压3.0V时,电流密度可以达到700A/cm2。
4H-SiC Schottky barrier diodes （SBDs） with merged p-i-n Schottky （MPS） structures and junction termination extension （JTE） structures were fabricated on the n-4H-SiC monocrystal conducting substrate.The p-type doped region was formed by high temperature ion implantation and annealing.High vacuum electron beam evaporation was used to deposit Ni/Pt/Au to form a Schottky contact,and the RF sputtering of TiW/Au and high temperature annealing were used to form an ohmic contact.The edge-crowding-effect was decreased in the high-voltage electric field by the field plate and JTE technology.The device has good forward rectification characteristic and higher reverse breakdown voltage.The breakdown voltage of 1 300 V,threshold voltage of 0.7 V,ideal factor of 1.15,Schottky barrier height of 0.93 eV,and the current density of 700 A/cm^2 at the forward voltage of 3.0 V for 4H-SiC MPS diodes were obtained experimentally.
出处
《微纳电子技术》
CAS
北大核心
2010年第7期394-396,408,共4页
Micronanoelectronic Technology
基金
国家自然科学基金资助项目(60876009,60890192)
作者简介
E-mail：yangsenji@163．com 杨霏（1977-），男，满族，河北承德人，博士，博士期间从事SiC外延材料生长研究，现研究方向为宽禁带SiC和GaN功率器件；
商庆杰（1983-），男，山东临清人，硕士，研究方向为宽禁带微波器件和电力电子器件的工艺技术开发。
