摘要
采用二步合成法制备了掺杂z%Sb2O3的Pb(Zn1/3Nb2/3)0.20(Zr0.50Ti0.50)0.80O3-0.5%MnO2(PZNTM)压电陶瓷(Sb2O3的质量分数为z=0、0.1、0.3、0.5、0.7、0.9)。探讨了不同剂量Sb2O3掺杂对陶瓷试样的相结构和机电性能的影响。结果表明,在1 150℃下烧结3 h,得到处在准同型相界附近的纯钙钛矿结构的陶瓷;随着Sb2O3掺杂量的增加,试样的压电常数d33和机电耦合系数kp先增大后减小,而介电损耗tanδ持续上升,机械品质因数Qm则持续下降。当z=0.3时,压电陶瓷的性能得到优化,d33和kp均达到最大值,分别为302 pC/N和0.60,而tanδ较小、Qm较大,分别为0.006和880。
A Pb（ Zn1/3 Nb2/3 ） 0. 20 （ Zr0.50Ti0.50 ） 0. 80O3-0.5 % MnOe （PZNTM） piezoelectric ceramics doped with z% Sb20% （mass contents z=0, 0.1, 0.3, 0.5, 0.7, 0.9） were prepared by the two step synthetic method. The effect of different doped mass contents of Sb2O3 on the crystallographic phase and electromechanical properties have been studied. The results showed that the pure perovskite structure was obtained at sintering temperature of 1 150 ℃ for 3 h, and is nearly by the morphotropic phase boundary （MPB）. With the increasing of Sb2O3 content, the piezoelec- tric constant daa and electromeehanical coupling factor kp increased, then decreased,moreover, the dielectric loss tan 3 increased and the mechanical quality factor Qm decreased. When z is 0. 3, the largest d3a and kp are 302 pC/N and 0.60, respectively, and the tan 3 and Qm are o. 006 and 880, respectively.
出处
《压电与声光》
CSCD
北大核心
2010年第2期287-289,292,共4页
Piezoelectrics & Acoustooptics
基金
广州市科技计划基金资助项目(2008z1-D411)
关键词
准同型相界
相结构
机电性能
morphotropic phase boundary
crystallographic phase
electromechanical properties
作者简介
作者简介：陈亚君（1982-），男，浙江省余姚市人，硕士生，研究方向为光电材料与器件。通讯作者：刘彭义，教授，tlpy@jnu．edu．cn。
