摘要
Flexible vanadyl-phthalocyanine （VOPc） thin-film transistors are fabricated by the weak epitaxy growth （WEG） method. The devices show a mobility of 0.5 cm2/Vs, an on/off ratio of 105 and a low leakage current of 10-9 A. The performances exhibit strong dependence on bending conditions and reversible change can be found when the bending strain is less than 1.5%. This results from the change of the trap density calculated by subthreshold slopes. The results indicate that VOPc films fabricated by the WEG method have good durability to flexing and possess great potential in flexible electronics.
Flexible vanadyl-phthalocyanine （VOPc） thin-film transistors are fabricated by the weak epitaxy growth （WEG） method. The devices show a mobility of 0.5 cm2/Vs, an on/off ratio of 105 and a low leakage current of 10-9 A. The performances exhibit strong dependence on bending conditions and reversible change can be found when the bending strain is less than 1.5%. This results from the change of the trap density calculated by subthreshold slopes. The results indicate that VOPc films fabricated by the WEG method have good durability to flexing and possess great potential in flexible electronics.
基金
Supported by the National Natural Science Foundation of China under Grant Nos 50773079, 50803063 and 20621401, and the National Basic Research Program of China under Grant No 2009CB939702.
作者简介
Email： yandh@ciac.jl.cn
