摘要
研究了不同进电方式条件下P型硅极间电阻的变化特征,并从进电有效接触面积的角度对其进行分析。通过对电阻率4.7Ω.cm的P型硅进行放电切割,获取的单脉冲放电电压、电流波形验证了试验分析的正确性。结果表明,面进电方式下P型硅的极间电阻最小,且进电有效接触面积越大,P型硅的极间电阻就越小,放电切割电流就越大。
The variation features of the interelectrode resistance of p-type silicon with different conduction mode were researched . At the same time, an analysis was carried viewed from the available area of the electricity interface. At last, p-type silicon with resistivity of 2.1 Ω·cm was cutting, and a single pulse voltage and current waves were grabbed, which verified the correctness of experiment analysis. The results show that the interelectrode resistance of p-type silicon is the smallest under face conduction, and it will decrease as the available area of the electricity interface growing, and the current of discharged cutting will increase.
出处
《电加工与模具》
2009年第5期10-13,共4页
Electromachining & Mould
基金
江苏省高技术研究计划资助项目(BG2007004)
关键词
进电方式
放电切割
极间电阻
硅
conduction mode
discharged cutting
interelectrode resistance
silicon
作者简介
毕勇，男，1985年生，硕士研究生。
