摘要
针对NAND型闪存无效块结构,提出基于CAM的闪存无效块分类匹配算法。针对闪存擦除、写入和读取操作过程中无效块管理给出相应策略。在数据写入闪存过程中,采用片外SRAM数据备份的方法防止数据存储错误。通过搭建FPGA实验平台,证明该算法能发现新增长的无效块,实现连续无效块快速匹配,并对数据进行冗余备份。
Based on the structure of the invalid NAND flash, the classified invalid block management algorithm is proposed. The invalid block management strategy is put forward respectively correspond to the erasing, writing and reading operation of the flash. When writing data to the flash, the written data stored into the NAND flash is simultaneously backup by the external SRAM to prevent data storage error. Experiment which is based on FPGA platform indicates tbe algorithm can quickly identify the new increased invalid blocks and the consecutive invalid blocks. The written data can be backup.
出处
《计算机工程》
CAS
CSCD
北大核心
2009年第16期251-252,255,共3页
Computer Engineering
作者简介
余辉龙（1982-），男，博士研究生，主研方向：数字图像存储，纠错编码技术；E-mail：lovystory@grnail．com
何昕，研究员、博士生导师；
魏仲慧，研究员；
王东鹤，博士研究生
