摘要
以GaP为靶材、Ar为工作气体,采用射频磁控溅射法制备了厚层GaP膜.对沉积过程中的辉光放电等离子体进行了发射光谱诊断,发现只有ArⅠ发射谱线.研究了工艺参数对发射谱线强度的影响规律,并在此基础上通过同时改变射频功率、Ar气流量及工作气压,使ArⅠ发射谱线强度保持相同.发现通过增大射频功率、减小工作气压而保持ArⅠ发射谱线强度不变可以提高GaP膜的沉积速率,并使GaP膜的沉积工艺参数得到优化.在优化后的工艺参数下制备出了符合化学计量比、红外透过性能好的厚层GaP膜.
GaP thick films were prepared on ZnS substrates by RF magnetron sputtering starting from a GaP target in an Ar atmosphere. Plasma emission diagnostics was employed to investigate the glow discharge during the deposition process. Only the emission lines of Ar atom appear and effects of the deposition parameters on the intensities of the emission lines were studied systematically. The deposition parameters were optimized through increasing the RF power and decreasing the working gas pressure of Ar simultaneously, with the intensity of the emission lines kept constant. And thus, stoichiometric GaP thick films with high IR transmission performance were deposited at an elevated deposition rate.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2009年第7期5022-5028,共7页
Acta Physica Sinica
基金
航空科学基金(批准号:2008ZE53043)资助的课题~~
关键词
GaP薄膜
射频磁控溅射
等离子体发射光谱
红外透射
GaP thin film, RF magnetron sputtering, plasma emission spectrum, infrared transmission
作者简介
通讯联系人．E-mail：lyp6@163．com
