摘要
应变Si材料的能带结构是研究设计高速/高性能器件和电路的理论基础。采用结合形变势理论的K.P微扰法建立了(001)面弛豫Si1-xGex衬底上生长的张应变Si的能带结构模型。结果表明:[001]、[001]方向能谷构成了张应变Si导带带边,其能量值随Ge组分的增加而变小;导带劈裂能与Ge组分成线性关系;价带三个带边能级都随Ge组分的增加而增加,而且Ge组分越高价带带边劈裂能值越大;禁带宽度随着Ge组分的增加而变小。该模型可获得量化的数据,对器件研究设计可提供有价值的参考。
The band structure of strained Si is the theoretical basis for the design of the high-speed and high-performance devices and circuits. The band structure models of strained Si on （001） relaxed Si1-xGex were presented using K. P perturbation method coupled with deformation potential theory. The results show that the [001], [00^-1]valleys constitute the conduction band （CB） edge, which moves down in electron energy as Ge fraction （x） increases, and the CB splitting energy is in direct proportion to x as well as all the valence band （VB） edges move up in electron energy as x increases. In addition, the decrease in the indirect bandgap and the increase in the VB edge splitting energy with increasing x were found. The quantitative data from the models supply valuable references to the devices design.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2009年第1期14-17,共4页
Research & Progress of SSE
基金
国家部委资助项目(Nos.51308040203,9140A08060407DZ0103)
关键词
应变硅
K.P法
能带结构
strained Si
K. P method
band structure
作者简介
宋建军（SONG Jianjun）男，1979年8月生，2001年获得太原理工大学材料学专业学士学位，现为西安电子科技大学微电子学与固体电子学专业在读博士生，主要从事硅基应变材料与器件的研究。联系作者：E-mail：wmshhsong@tom．com。
