摘要
Polycrystalline silicon （poly-Si） thin-film is fabricated on Al-coated planar glass substrates at the temperature below 100℃, using aluminium-induced crystallized （AIC） amorphous silicon （a-S0 deposited by dc-magnetron sputtering under an electric field. The properties of NA poly-Si films （AIC of dc-magnetron sputtered silicon non-annealing） are characterized by Raman spectroscopy and x-ray diffraction （XRD） spectroscopy. A narrow and symmetrical Rarnan peak at a wave number of about 521 cm^-1 is observed for samples, showing that the films are fully crystallized. XRD spectra reveal that the films are preferentially （111） oriented. Furthermore, the XRD spectrum of the sample prepared without electric field does not show any XRD peaks for poly-Si, which only appears at about 38° for AI （111） orientation. It is indicated that the electric field plays an important role in crystallization of poly-Si during the dc-magnetron sputtering. Thus, high quality poly-Si film can be obtained at low temperature and separate post-deposition step of AIC of a-silicon can be avoided.
Polycrystalline silicon （poly-Si） thin-film is fabricated on Al-coated planar glass substrates at the temperature below 100℃, using aluminium-induced crystallized （AIC） amorphous silicon （a-S0 deposited by dc-magnetron sputtering under an electric field. The properties of NA poly-Si films （AIC of dc-magnetron sputtered silicon non-annealing） are characterized by Raman spectroscopy and x-ray diffraction （XRD） spectroscopy. A narrow and symmetrical Rarnan peak at a wave number of about 521 cm^-1 is observed for samples, showing that the films are fully crystallized. XRD spectra reveal that the films are preferentially （111） oriented. Furthermore, the XRD spectrum of the sample prepared without electric field does not show any XRD peaks for poly-Si, which only appears at about 38° for AI （111） orientation. It is indicated that the electric field plays an important role in crystallization of poly-Si during the dc-magnetron sputtering. Thus, high quality poly-Si film can be obtained at low temperature and separate post-deposition step of AIC of a-silicon can be avoided.
基金
Supported by the National Natural Science Foundation of China under Grant Nos 60676033 and 50505037, the Programme for Changjiang Scholars of the Ministry of Education of China, and Innovative Research Team （No 0629）, the National Hi-Tech Research and Development Programme under Grant Nos 2006AA04Z322 and 2007AA11Z211, and ＇Qing Lan＇ Talent Engineering Funds by Lanzhou Jiaotong University （No 2006A16）.
作者简介
To whom correspondence should be addressed. Email： clwangee@163.com
