摘要
介绍了一种适用于三维毫米波集成电路的Si基微机械垂直过渡,该垂直过渡是两层0.1mm厚的共面波导传输线通过0.3mm厚中间层,在中间层采用了同轴结构,该同轴结构通过金属化通孔来实现。这一设计原理简单,结构简洁,便于优化设计,具有很宽的带宽和平坦的幅度响应。运用三维电磁场仿真软件对该垂直过渡结构进行了建模,并作了优化设计与仿真计算,运用微机械金属化通孔工艺和多层键合工艺研制了样品。在片测试结果表明该样品性能良好,在26.5～34.0GHz该过渡插入损耗小于3.5dB,带内起伏小于2dB。
A silicon micromachined vertical transition was presented, which can be used for 3-dimentional （3D） millimeterwave integrated circuits. This transition was between two coplanar waveguides （CPWs） with 0. 1 mm thickness individually through a interlayer of 0.3 mm thickness. A coaxial architecture was chosen in the interlayer, which is easy to be opertimized and simple in operating principle and structure, and results in a wideband characteristic and flat amplitude responses. The coaxial structure was realized by using metallic via holes. The vertical transition was modeled, simulated and optimized by 3D electro-magnetic field simulation software, and then fabricated by silicon micromachined processing. The on-wafer measured results of the prototypes show that an insertion loss is less than 3, 5 dB at 26.5 - 34. 0 GHz, along with an amplitude variation of less than 2 dB.
出处
《微纳电子技术》
CAS
2008年第12期712-715,共4页
Micronanoelectronic Technology
关键词
KA波段
Si基微机械
三维集成电路
宽带垂直过渡
热压键合
Ka-band
silicon micromachined
3-dimentional integrated circuits
wideband vertical transition
thermocompression bonding
作者简介
E-mail： dxf_ nedi@sina.com戴新峰（1977-），男，江苏泰州人，硕士，工程师，主要从事毫米波集成电路与模块的研制工作；
郁元卫（1970-），男，江苏启东人，高级工程师，从事MEMS器件与电路研究，已受理和获得6项国家专利；
贾世星（1975-），男，江苏南通人，工程师，从事MEMS工艺技术研究；
朱健（1962-），女，江苏苏州人，博士，研究员，南京电子器件研究所微米纳米研究开发中心主任、中国微米纳米技术学会理事，主要从事MEMS及微波器件与电路研究工作，已发表论文30余篇，已受理和获得12项国家专利。
