摘要
通过在Ar气氛及真空环境中进行的高阻区熔Si单晶生长实验,分析了晶体直径、晶体生长环境及晶体生长速率对晶体中微缺陷及少子寿命的影响及产生这种影响的原因。单晶生长实验表明,与在Ar气氛下的单晶生长相比,在真空环境下采用较低的晶体生长速率即可生长出无漩涡缺陷的单晶,而当晶体生长速度较高时,尽管可以消除漩涡,但单晶的少子寿命却有明显的下降。
By float zone growth experiments of Si single crystals in vacuum and Ar condition respectively, the influence of the crystal diameter, the crystal growth ambience and the crystal growth speed to the crystal defects and the minority cartier lifetime were analyzed. Comparing with Ar ambience, when growing crystal in vacuum it needs lower growth speed to get free swirl-defects crystal. And when the growth speed is much higher than needed to eliminate the swirl-defects, the minority carrier lifetime of the crystal will be reduced markedly.
出处
《半导体技术》
CAS
CSCD
北大核心
2008年第11期1003-1006,共4页
Semiconductor Technology
关键词
高阻硅单晶
微缺陷
少子寿命
high resistivity Si single crystal
micro-defects
minority carrier lifetime
作者简介
闫萍（1964-），女，高级工程师，1995年至今一直从事高阻区熔硅单晶的研制工作。
