摘要
用热蒸发CVD法制备了β-Ga2O3纳米材料,并用光致发光(PL)方法研究了其发光特性.X射线衍射分析显示,产物为单斜结构的β-Ga2O3.扫描电子显微镜测试表明:在较小氧流量条件下制备的产物为β-Ga2O3纳米带,宽度小于100 nm,长度有几微米;较大氧流量时制备出β-Ga2O3纳米晶粒结构,晶粒尺度在80—150 nm.PL的测试表明:β-Ga2O3纳米结构在波长516 nm处有很强的绿色发光带,且随着氧流量的逐渐增加发光强度逐渐减弱.在氧气氛中900℃退火2 h处理后,发光强度减弱,进一步证实氧空位缺陷是β-Ga2O3纳米材料发光的主要因素.
We have prepared the gallium oxide （ β-Ga2O3 ） nanomaterials from gallium and oxygen by thermal evaporation in the argon atmosphere and researched their photoluminescence （PL）. X-ray diffraction （XRD） revealed that the synthesized products are monoclinic gallium oxide, and its morphology as observed by the scanning electron microscope （SEM） revealed that Ga2O3 nanobehs with breadth less than 100 nm and length of several micrometers are synthesized under low oxygen pressure, while nanoparticles are synthesized under high oxygen pressure. Room-temperature photoluminescence under excitation of 325 nm shows that the β-Ga2O3 nanostructures have stable emission at 516 nm, which may be related to the defects such as the oxygen vacancies and the gallium-oxygen vacancy pairs.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2008年第11期7322-7326,共5页
Acta Physica Sinica
基金
国家自然科学基金(批准号:50402024
50872047)资助的课题~~
关键词
光致发光
氧流量
纳米结构
GA2O3
photoluminescence, oxygen pressure, nanostructurc, Ga2O3
作者简介
通讯联系人．E-mail：xqliu@lzu．edu．cn
