摘要
ZnO为直接宽禁带半导体材料,室温下禁带宽度达到3.37eV,束缚激子结合能高达60meV,可广泛用于光电器件、表面声波器件、场发射材料、传感器、紫外激光器及太阳能电池等。由于结构形貌与材料的性能和应用相关,ZnO纳米材料形貌控制一直是该材料研究领域的热点。由ZnO纳米棒和纳米线组成一定规则的聚集体,可以构筑特殊的纳米功能材料和纳米器件,已引起人们的高度关注。具有特殊花样的ZnO单晶聚集体的制备方法有水热法、热蒸发输运沉积法和超声辐照法等。
Using Zn（acac）2 as precursor, ethylenediamine as base, distilled water as solvent, multigonal（octagonal and above） star-shaped ZnO microcrystals with high purity and even particle size have been prepared in domestic microwave oven by low heating for 8 min. The obtained powder was characterized by XRD, FESEM and TEM. The individual star-shaped ZnO microcrystal was composed of some hexagonal nanocones with diameters of 100-500 nm and lengths of 0.6-1 μm growing along c axis. The room temperature PL spectrum showed a strong broad yellow emission with peak located at 564 nm. The deep-level involved in the yellow luminescence is attributed to interstitial oxygen.
出处
《无机化学学报》
SCIE
CAS
CSCD
北大核心
2008年第3期495-498,共4页
Chinese Journal of Inorganic Chemistry
基金
国家自然科学基金(No.20501002)
安徽省教育厅自然科学基金(No.2005KJ110,No.2006KJ159B)
安徽省高校青年教师科研计划(No.2005jq1147zd,No.2006jq1228)资助项目
关键词
ZNO
半导体
微波辐照
星形结构
zinc oxide
semiconductor
microwave irradiation
star-shaped structure
作者简介
通讯联系人：胡寒梅，女，31岁，博士，副教授；研究方向：无机纳米材料的合成和性能研究。E-mail：hmhu@ustc．edu
