摘要
成功地研制了八元线阵红外ＣＣＤ多路传输器。该器件为三相结构，采用埋沟和三层多晶硅技术。器件动态范围≥４５ｄＢ，转移效率≥９９．９９％，非均匀性±５％，信号输出幅度≥８００ｍＶ，每个输出信号时间为９６．６μｓ，驱动电压±１５Ｖ。
Eight element linear array infrared charge coupled devices (IRCCD)multiplexer has been developed successfully.The device utilizes three phase construction with the technology of buried channel and three layer polysilicon.The dynamic range of the device is up to ≥45dB with the transfer efficiency 99 99%.The non uniformity is ±5%,signal output amplitude is≥800mV,each output signal time is 96 6μs,and drive voltage is±15V.
出处
《半导体情报》
1997年第5期16-19,共4页
Semiconductor Information
