摘要
文章中设计的四象限InGaAs雪崩光电二极管(Avalanche Photo Diode,APD)的管芯结构采用正入光式平面型结构,而材料结构采用吸收区、倍增区渐变分离的APD结构,在对响应时间、暗电流和响应度等参数进行计算与分析的基础上,优化了器件结构参数。试验结果表明,其响应时间≤1.5 ns,响应度≥9.5 A/W,暗电流≤40 nA,可靠性设计时使PN结和倍增层均在器件表面以下,可有效抑制器件表面漏电流,提高器件的可靠性。
The chip of the four-quadrant InGaAs APD in this paper is designed in a frontal incident planar structure and its ma- terial part is an SAGM APD. On the basis of systematical analysis and calculation of its important parameters, such as response time, dark current and responsivity, the optimized structural and the technological parameters are given. The test results show that its response time is ≤1.5 ns, responsivity ≥9.5 A/W and dark current ≤40 nA. As the PN junction and multiplication layer are set under the surface of the device in the reliability design, the surface leakage current can be effectively restrained and the reliability of the device improved.
出处
《光通信研究》
北大核心
2007年第6期43-46,共4页
Study on Optical Communications
作者简介
王致远（1980-），男，江苏南京人，硕士，研究方向为半导体激光器。
