摘要
The temperature dependence of silicon-on-insulator thermo-optic attenuators is analysed, which originates from the temperature dependence of characteristics of multimode interference. The attenuator depth and power consumption are independent of temperature while the insertion loss depends on the temperature heavily. The variation of the insertion loss decreases from 4.3 dB to i dB as the temperature increases from 273K to 343K.
thermo 眼的 attenuatorsis 分析了的 silicon-on-insulator 的温度依赖，它从 multimodeinterference 的特征的温度依赖发源。当 theinsertion 损失重重地取决于温度时，衰减器深度和电源消费独立于温度。到 1 dB 的 4.3 dB 从 273 K 作为温度增加到 343 K 的插入损失 decreasesfrom 的变化。
基金
Supported in part by the National Key Basic Research Special Foundation of China under Grant No G2000-03-66, and the National High Technology Programme of China under Grant No 2002AA312060, and the National Natural Science Foundation of China under Grant No 60336010.
关键词
SWITCH
光学衰减器
温度
硅绝缘体
多状态干扰
作者简介
Emaih ytli@semi.ac.cn
