摘要
报道了新研制出的160×128元GaAs/AlGaAs多量子阱长波红外焦平面器件。使用MBE的方法在半绝缘的GaAs衬底上生长器件结构;开发了用普通光刻技术和离子束刻蚀法制备2D光栅技术,以及探测器芯片与读出电路互联技术。在77 K时测试,器件的平均峰值探测率Dλ*=1.28×1010 cmW-1Hz1/2,峰值波长为λp=8.1μm,截止波长为λc=8.47μm。器件的非盲元率≥98.8%,不均匀性10%。
A 160×128 focal plane arrays （FPAs） of long-wavelength GaAs/AlGaAs multiple quantum well infrared photodetector （QWIP） were fabricated, The device structure was grown on a semi-insulating GaAs wafer by molecular beam epitaxy （MBE）, The 2D surface grating reflector arrays were fabricated by using the standard photolithography and ion beam etching （IBE） technologies. The interconnected technology of chip of the detector and readout circuit is studied.The measured average peak detectivity Dλ＊ of the FPAs at 77 K is 1.28×10^10 cmW^-1Hz^1/2 with the peak wavelength at 8.1 μm and the cutoff wavelength at 8.47 μm.The pixel operability of the FPAs is 98.8% or greater and the full scale nonuniformity is smaller than 10%.
出处
《红外与激光工程》
EI
CSCD
北大核心
2007年第5期702-704,共3页
Infrared and Laser Engineering
基金
国家863计划资助项目(2002AA313100)
关键词
长波红外探测器
量子阱
焦平面阵列
Long-wavelength infrared photodetector
Quantum well
Focal plane array
作者简介
种明（1959-），女，北京人，高工，主要从事新型半导体光电子器件结构设计和工艺研究。Email：chongm@red．semi．ac．cn
