摘要
用MBE技术生长GaAs／AlGaAs多量子阱材料，研制出8×8独立寻址反射型空间光调制器列阵，对列阵的光反射谱、光电流谱、电场调制特性及电学特性进行了全面的测试，并对列阵的均匀性进行了分析．
8 × 8 GaAs/AlGaAs multiple-quantum-well (MQW) reflectance spatial light modulator (SLM) arrays have been investigated and fabricated. The light reflectivity, photocurrent and other electrical characteristics are measured. The analysis is emphasized on the behavior of asymmetric F-P cavity (ASFP) effect and array uniformity of contrast ratio and electric properties etc.
基金
国家自然科学基金
