摘要
研究了SMIC90nm工艺1.4nm栅厚度0.18μm×0.15μm尺寸nMOS器件随机电报信号(randomtele-graph signal,RTS)噪声幅度特性.在此基础上,提出了利用扩散流机理来分析亚阈值区RTS噪声的方法,引入了陷阱电荷影响栅电极的电荷分布,进而对沟道电流产生影响的机制.研究表明,该方法不仅符合实验结果,还可以解释RTS幅度的宽范围分布.
Based on research on the amplitude of RTS in SMIC 90nm CMOS nMOS 0.18μm×0.15μm devices with a 1.4nm gate oxide,an approach to diffusion that fits MOS operation principles better is proposed. Furthermore,a new mechanism in which a border trap changes the charge distribution of the gate and thus influences the channel current is also involved. Research shows that this method not only explains the experiment results, but also can be used to explain the distribution of RTS amplitude.
基金
国家自然科学基金资助项目(批准号:60276028和60676053)~~
作者简介
通信作者：Email：paulinx@163．com
