摘要
对甚高频等离子体增强化学气相沉积（VHF-PECVD）法制备氢化微晶硅（μc-SiH）薄膜中等离子体功率的影响进行了研究。原位光发射谱（OES）监测表明,SiH4等离子体中特征发光峰ISiH、IHα、IHβ和IH/ISiH均随等离子体激发功率的增加而增大,并且变化趋势因功率区间的不同而异。由厚度与Raman光谱测量可知,随着等离子体功率的增加,μc-SiH薄膜的平均晶粒尺寸单调减小,而沉积速率与结晶体积分数则呈现出先增后减的变化,等离子体功率对薄膜的沉积速率与结构特征具有“调制作用”。光暗电导率测量进一步得到,μc-SiH薄膜的电导随等离子体功率增大而减小,暗电导率的变化与之相反,材料的光敏特性在较高功率条件下激剧恶化。研究结果表明,当前的沉积条件下,等离子体功率的优化值界于35-40W间。
A series of μc-Si：H thin films have been fabricated with VHF-PECVD at different plasma power. As shown by in situ OES diagnosis,the characteristic intensities such as ISiH^＊, IHα, IHβ and IH＊ /ISiH^＊ increase with the plasma power. From the measurements of thickness and Raman spectra,it can be observed that all the average grain sizes of μc-Si： H thin films decrease monotonously,and the deposition rates and the crystalline volume fractions increase firstly and then decrease, thus there is a strong modulation effect of plasma power on the deposition and structure of μc-Si： H films. The measurements of photo and dark conductivities show that,the dark conductivities of μc-Si： H thin films increase with the increase of plasma power,and the photo sensitivities decrease significantly and severely deteriorate at high plasma power. Based on the above results,it can be conduded that the optimized plasma power is 35-40 W.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2007年第5期558-561,共4页
Journal of Optoelectronics·Laser
基金
广东省自然科学基金资助项目(05300378
06025195)
广东省科技计划资助项目(2006A10702001)
暨南大学自然科学基金资助项目(51204056)
作者简介
杨恢东（1967-），男，博士，副教授，主要从事半导体光电子薄膜材料与器件研究，主持省部级项目3项，发表论文40余篇．E-mail：yanghuidong@sohu．com
