摘要
采用PECVD技术,在玻璃衬底上低温沉积了优质本征纳米硅薄膜,并利用Raman光谱对其微结构作了表征。研究结果表明,硅烷浓度、衬底温度Ts对表征纳米硅薄膜微结构的晶化率和平均晶粒尺寸参数影响很大。SiH4浓度越低,越有利于晶化,对应的晶化率拐点温度越低。平均晶粒尺寸、晶化率随衬底温度的升高具有相似的变化规律,谱中出现的拐点温度一致,暗示它们之间存在紧密的联系。从薄膜生长角度对该实验结果作了合理解释。
High quality nc-Si：H films were grown by plasma enhanced chemical vapor deposition（PECVD） on glass substrates at low temperatures.Its microstructures were characterized with Raman spectroscopy. The results show that the SiH4 partial pressure and the substrate temperature significantly affect the crystallization and gain size of the film, For example, the lower the SiH4 partial pressure, the better the crystallization;as the substrate temperature rises, the grain grows and the crystallization improves. Possible mechanism（s） was also tentatively explained,
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2007年第3期200-202,共3页
Chinese Journal of Vacuum Science and Technology
关键词
纳米硅
晶化率
晶粒尺寸
拐点温度
nc-Si：H,Crystalline volume fraction,Grain size,Inflection point temperature
作者简介
联系人：E-mail：xygao@zzu．edu．cn；Tel：0371-657766917
