摘要
利用１．０６μｍ脉冲Ｎｄ∶ＹＡＧ激光，以含Ｚｎ的固态杂质源在化合物半导体ＧａＡｓ基片上进行诱导扩散，作出了Ｐ－Ｎ结。获得了亚微米的扩散结结深及１０２０ｃｍ－３量级的表面掺杂浓度，并利用二次离子质谱仪对扩散样品进行成分的逐层扫描分析，研究了结深和掺杂浓度与辐照激光脉冲数。
The P N junctions were produced by pulsed 1.06 μm Nd∶YAG laser induced diffusion of Zn into substrate GaAs with solid state diffusion source. The performance parameters of the P N junctions such as X j and C(x,t,T) are presented as the functions of the laser pulse number N and the power density of the exposed region. The experimental results show that junction depth X j reaches submicrometer and the dopant concentration is of the order of 10 20 cm -3 .
出处
《光学学报》
EI
CAS
CSCD
北大核心
1997年第4期419-422,共4页
Acta Optica Sinica
基金
国家自然科学基金
关键词
激光诱导处理
光电子
半导体
掺杂
砷化镓
laser assisted processing, laser induced diffusion, photoelectron, semiconductor.
