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考虑高指数晶面的体硅腐蚀模拟新CA模型 被引量：2

A Novel Cellular Automata Model for Silicon Bulk Etching Simulation Handling High Index Planes
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摘要 针对目前体硅腐蚀(硅各向异性腐蚀)的3DCA模型无法引入(211),(311),(331),(411)等较多高密勒指数晶面,模拟精度不高的问题,建立了一种高精度的体硅腐蚀模拟的新3D连续CA(元胞自动机)模型.模型可以有效引入(211),(311),(331),(411)等高密勒指数晶面,提高模拟精度.模拟结果与实验结果一致,证明了模型的模拟效果,对体硅腐蚀模拟研究和提高MEMS设计水平具有一定的实用意义. A novel three-dimensional （3D） continuous cellular automata （CA） model is presented for the simulation of silicon bulk etching processes. More high-index planes such as （211）, （311）, （331）, （411） planes have been successfully incorporated into the novel 3D continuous CA model to increase the simulation accuracy. Simulation results agree with experimental results, indicating that the simulation accuracy has been increased. This is useful for the research of silicon bulk etching process and micro-electro-mechanical system （MEMS） design.
作者 周再发 黄庆安 李伟华 邓伟
机构地区 东南大学MEMS教育部重点实验室
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第5期731-736,共6页 半导体学报（英文版）
基金 国家杰出青年科学基金资助项目(批准号:50325519)~~
关键词 元胞自动机 腐蚀模拟 微机电系统 微加工技术 各向异性腐蚀 cellular automata etching simulation micromachining MEMS anisotropic etching
分类号 TN304 [电子电信—物理电子学]
作者简介 通信作者．Email：zhouzaifa@yahoo．com.cn
  • 相关文献

参考文献10

  • 1Than O, Buttgenbach S. Simulation of anisotropic chemical etching of crystalline silicon using a cellular automata model. Sensors and Actuators, 1994, A45: 85
  • 2Hubbard T J. MEMS design: the geometry of silicon micromachining. Ph D Dissertation, California: California Institution of Technology, 1994
  • 3Marchetti J, He Y, Than O, et al. Efficient process development for bulk silicon etching using cellular automata simulation techniques. SPIE' s Symposium on Micromaching and Microfabrication, Micromachinged Devices and Components,Santa Clara, USA, 1998 : 1
  • 4Zhu Z, Liu C. Micromachining process simulation using a continuous cellular automata method. Journal of Microelectromechanical Systems, 2000,9 (2) : 252
  • 5姜岩峰,黄庆安.硅各向异性腐蚀的原子级模拟[J].Journal of Semiconductors,2005,26(3):618-623. 被引量：5
  • 6周再发,黄庆安,李伟华,王涓,孙岳明.元胞自动机方法模拟硅的各向异性腐蚀研究[J].固体电子学研究与进展,2006,26(1):128-133. 被引量：1
  • 7周再发,黄庆安,李伟华,王涓,孙岳明.硅各向异性腐蚀模拟的3-D连续CA模型研究[J].仪器仪表学报,2006,27(6):551-555. 被引量：3
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  • 10Gosalvez M A,Nieminen R M,Kilpinen P,et al. Anisotropic wet chemical etching of crystalline silicon:Atomistic Monte-Carlo simulations and experiments. Appl Surf Sci, 2001,178 (1):7

二级参考文献36

  • 1温殿忠,庄玉光,邱成军.硅在KOH溶液中各向异性腐蚀机理的研究[J].黑龙江大学自然科学学报,1996,13(3):55-58. 被引量：4
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共引文献6

同被引文献18

  • 1Zhu Z, Liu C. Micromachining process simulation using a continuous cellular automata method. Journal of Microelectro-Mechanical Systems,2000,9(2) :252.
  • 2Gosalvez M A. Nieminen R M. Anisotropic wet chemical etching of crystalline silicon: atomistic Monte-Carlo simulations and experiments. Appl Surf Sci, 2001,178( 1 -4) : 7.
  • 3Wakayama T, Kobayashi T, lwata N, Micro-fabrication of silicon/ ceramic hybrid cantilever for atomic force microscope and sensor applications. Sensors and Actuators A, 2006,126 ( 1 ) : 159.
  • 4Gosalvez M A,Foster A S,Nieminen R M. Multiscale modeling of anisotropic wet chemical etching on crystalline silicon. Europhysics Letters,2002,6(30) :467.
  • 5Schroder H,Obermeier E. Convex corner undercutting of { 100} silicon in anisotropic KOH etching:The new step-flow model of 3- D structuring and first simulation results. Journal of Microelectromechanical Systems,2001,10(1) ,88.
  • 6Akis R, Ferry D K, Musgrave C B. Kinetic lattice Monte Carlo simulations of processes on the silicon (100) surface. Physica E: Low-Dimensional Systems and Nanostructures,2003,19 (1/2) : 183.
  • 7Van Veenendaal E, Nijdam A J, Van Suchtelen J. Simulation of anisotropic wet chemical etching using a physical model. Sensors and Actuators A, 2000,84 (3) : 324.
  • 8Gosalvez M A, Foster A S, Nieminen R M. Atomistic simulations of surface coverage effects in anisotropic wet chemical etching of crystalline silicon. Appl Surf Sci, 2002,202 (3/4) : 160.
  • 9Mayer G K,Offereins H L,Sandmaier H,et al. Fabrication of non underetched convex corners in anisotropic etching of (100)-silicon in aqueous KOH with respect to novel micromechanic. Elements J Eleetro-Chem Soc, 1990,137(12):3947.
  • 10Xing Y, Gosalvez M A, Sato K. Step flow based cellular automaton for the simulation of anisotropic etching of complex MEMS structures. New Journal of Physics, 2007,9 (12) : 1

引证文献2

二级引证文献3

Journal of Semiconductors
2007年 第5期

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