期刊文献+

金属诱导横向结晶多晶硅薄膜晶体管热载流子应力退化特性及模型研究

A Study on Hot Carrier Stress Degradation Characteristics and Models of Polycrystalline Silicon Thin Film Transistors Fabricated by Metal-induced Lateral Crystallization
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摘要 低温多晶硅薄膜晶体管(LTPS TFT)广泛应用于平板显示。从开态和关态两个方面,研究了热载流子(HC)应力下,N型金属诱导横向结晶(MILC)LTPS TFT器件退化特性及模型。 Low temperature polycrystalline silicon thin film transistors (LTPS TFTs) are widely used in the flat panel displays. The on and off state hot carrier (HC) stress degradation characteristics and models of n-type LTPS-TFTs fabricated by metal-induced lateral crystallization (MILC) are investigated, respectively.
作者 朱臻
出处 《苏州大学学报(工科版)》 CAS 2007年第1期7-11,共5页 Journal of Soochow University Engineering Science Edition (Bimonthly)
基金 国家自然科学基金项目(编号60406001)
关键词 多晶硅薄膜晶体管 金属诱导横向结晶 热载流子退化 可靠性 开态特性 关态特性 Poly-Si TFT MILC hot carrier degradation reliability on state characteristics off state characteristics
作者简介 朱臻(1980-),男,硕士研究生,主要研究方向为半导体器件及其可靠性。
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参考文献8

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