摘要
利用电化学阻抗谱和极化曲线研究了硫脲、烯丙基硫脲、苯基硫脲在金属铜表面上的自组装膜的质量和缓蚀效率,并通过量子化学计算进一步研究了各种分子和金属铜的相互作用.结果表明硫脲类分子在金属铜表面上的成膜能力顺序为:苯基硫脲>烯丙基硫脲>硫脲,并揭示了分子结构对硫脲类化合物在金属铜表面自组装影响的本质,为进一步寻找和制备优良的缓蚀功能自组装膜提供理论依据.
The quality and inhibition efficiency of thiourea （TU）, allylthiourea （AT） and phenylthiourea （PT） self-assembled films were studied by electrochemical impedance spectroscopy and polarization curves, respectively. Quantum chemical calculations were performed to investigate interactions between copper and thioureas. The self-assembled ability order of thioureas onto copper was obtained, which is PT〉A〉TU. The structural essential of thioureas self-assembled on copper was revealed, which can provide a theoretical basis for looking for and preparing more inhibitive self-assembled films.
出处
《化学学报》
SCIE
CAS
CSCD
北大核心
2007年第5期390-394,共5页
Acta Chimica Sinica
基金
山西省教育厅高校科技开发资助项目(No.20061039).
关键词
硫脲
自组装
缓蚀
thiourea
self-assembly
inhibition
作者简介
E-mail： chuntaowan88@hotmail.com
