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Dielectric Characteristics of Ba_(0.65)Sr_(0.35)TiO_3 Thin Films by Sol-Gel Method

Dielectric Characteristics of Ba_(0.65)Sr_(0.35)TiO_3 Thin Films by Sol-Gel Method
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摘要 Ferroelectric Ba0.65Sr0.35TiO3 (BST) thin films on the Pt/Ti/SiO2/Si substrate have been successfully prepared by sol-gel. Such films have approximately 300 nm thicknesses with a remnant polarization of about 2.95 μ℃/cm^2 and a coercive field of about 21.5 kV/cm. The investigations of X-ray diffraction and atomic force microscopy show that the BST films annealed at 650 ℃ exhibit a tetragonal structure and that the films dominantly consist of large column or grains of about 89 nm in diameter. The curves of the temperature dependence of dielectric coefficient in different frequencies display the curie transition at the temperature around 23 ℃. The dielectric loss tangent of BST thin fdms at 100 kHz is less than 0.04. As a result, the BST thin films are more applicable for fabrication of infrared detector compared with the BST thin films reported previously. Ferroelectric Ba0.65Sr0.35TiO3 (BST) thin films on the Pt/Ti/SiO2/Si substrate have been successfully prepared by sol-gel. Such films have approximately 300 nm thicknesses with a remnant polarization of about 2.95 μ℃/cm^2 and a coercive field of about 21.5 kV/cm. The investigations of X-ray diffraction and atomic force microscopy show that the BST films annealed at 650 ℃ exhibit a tetragonal structure and that the films dominantly consist of large column or grains of about 89 nm in diameter. The curves of the temperature dependence of dielectric coefficient in different frequencies display the curie transition at the temperature around 23 ℃. The dielectric loss tangent of BST thin fdms at 100 kHz is less than 0.04. As a result, the BST thin films are more applicable for fabrication of infrared detector compared with the BST thin films reported previously.
出处 《Journal of Electronic Science and Technology of China》 2007年第1期47-49,90,共4页 中国电子科技(英文版)
关键词 BST thin films remnant polarization coercive field infrared detector BST thin films remnant polarization coercive field infrared detector
作者简介 LHJ Gui-jun (刘桂君) was born in Sichuan, China, in 1979. She is now pursuing M.S. degree at University of Electronic Science and Technology of China (UESTC). Her research interests include properties and preparation of BaxSr1-xTiO3 strontium barium titanat thin film. E-mail: liugj1998@ 126.com. HU Wen-cheng (胡文成) was born in Sichuan, China, in 1967. He is now an associate professor. His research interests include properties and preparation of BaxSr1-xTiO3 (strontium barium titanat) thin film. E-mail: huwc@uestc.edu.cn.SHEN Yi-dong (沈怡东) was born in Jiangsu, China, in 1985. He is now pursuing B.S. degree in UESTC. His research interests include preparation of BaxSrl-xTiO3 (strontium barium titanat) thin film. E-mail: syd85@163.com.
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  • 1T.-J. Zhang,H. Ni,W. Wang.Preparation and Characterization of Epitaxial-Grown Ba0.65Sr0.35TiO3 Thin Films by the Sol-Gel Process on Pt/MgO Substrates[J].Journal of Materials Synthesis and Processing.2002(1)

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