期刊文献+

用半导体饱和吸收镜进行Yb:YAG晶体被动锁模特性研究 被引量:1

Researching on Yb:YAG passive mode-locked characters using SESAM
在线阅读 下载PDF
导出
摘要 为了研究半导体泵浦的Yb:YAG晶体被动锁模特性,分别采用光纤耦合输出激光器,半导体列阵和激光二级管作为泵浦源,利用直腔和五镜谐振腔,用半导体饱和吸收体(SESAM)作为被动锁模器件,对Yb:YAG晶体的被动锁模运转情况进行研究。实验中分别得到了谱线宽度为1.1nm,2nm和2.8nm的稳定锁模脉冲序列。最后得出结论,对于相同的SESAM,被动锁模脉宽主要受晶体内部的泵浦光功率密度和激光介质发射带宽两个因素的影响。对被动锁模激光器的研究具有指导意义。 To research the passive mode- locked characters of Yb: YAG crystal, three different pump sources be used in the Yb: YAG laser: fiber- coupled laser, diode array and single stripe diode laser in different cavity shape: linear cavity and five mirror cavity, the SESAM was used as the passive-mode locked tool. Got the spectrum band - width of the passive mode - locked trains: 1. 1nm,2nm and 2.8nm. Found that the pulse - width of the passive mode - locked laser main relies on: the power intensity of the pump light in the crystal and the emission spectrum of the laser crystal.
出处 《激光杂志》 CAS CSCD 北大核心 2007年第1期8-9,共2页 Laser Journal
基金 北京市自然科学基金资助重点项目(Grant:3021001)
关键词 YB:YAG 半导体饱和吸收体 半导体激光器抽运 谱线宽度 Yb: YAG SESAM diode pumped spectrum bandwidth
作者简介 于海娟,女(1977-),博士生,现在北京工业大学攻读博士学位.研究方向为超短脉冲激光技术。
  • 相关文献

参考文献8

  • 1U.Keller,D.A.B.Miller,G D.Boyd.T.H.Chiu,J.F.Ferguson.Solid-state low-loss intracavity saturable absorber for Nd:YLF lasers:an A-FPSA[J].Opt.Lett.,1992,17(7):505.
  • 2R.Fluck,et al.Diode-pumped passively mode-locked 1.3μm Nd:YVO4 and Nd:YLF lasers by use of semiconductor absorbers[J].Opt.Lett.,1996,21 (17):1378-1380.
  • 3Th.Graf,et al.Multi-Watt Nd:YVO4 laser mode locked by a semiconductor saturable absorber mirror and side-pumped by a diode-laser bar[J].Opt.Commun.,1999,159:84-87.
  • 4G.J,Spuhler,et al.27W passively mode-locked Nd:YAG laser[C].IEEE.Pacific Rim Conference on Lasers and Electro-Optics,CLEO-Technical Digest,2000.
  • 5Y.F.Chen,et al.Diode-end-pumped passively mode-locked high-power Nd:YVO4 laser with a relaxed saturable bragg reflector[J].Opt.Lett.,2001,26 (4):199-201.
  • 6F.Brunner,et al.Widely tunable pulse durations from a passively mode-locked thin-disk Yb:YAG laser[J].Opt.Lett.,2001,26 (6):379-381.
  • 7Max Josef Lederer,et al.Ion-implanted lnGaAs single quantum well semiconductor saturable absorber mirrors for passive mode-locking[J].J.Phys.D:Appl.Phys.,2001,34:2455-2464.
  • 8张丙元,李港,陈檬,王勇刚,张志刚.Comparative study of the mode-locking of Nd:GdVO_4 and Nd:YAG lasers with semiconductor saturable absorber mirrors[J].Chinese Optics Letters,2003,1(8):477-479. 被引量:4

二级参考文献18

共引文献3

同被引文献17

引证文献1

二级引证文献4

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部