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高性能Ag-Pb-Sb-Te体系半导体热电材料的制备与性能 被引量:5

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摘要 采用机械合金化(MA)和放电等离子烧结(SPS)方法制备了高性能的Ag-Pb-Sb-Te体系块体热电材料.利用XRD和SEM等表征手段分析了材料的物相组成和微观结构,详细研究了组分变化,尤其是Pb含量的改变对Ag0.8Pb18+xSbTe20体系材料热电性能(包括电阻率、Seebeck系数、功率因子、热导率和热电优值等)的影响规律.研究表明,Ag-Pb-Sb-Te体系材料的最佳组成为Ag0.8Pb22.5SbTe20,对应的最大热电优值为1.2(673K).
出处 《科学通报》 EI CAS CSCD 北大核心 2007年第1期114-119,共6页 Chinese Science Bulletin
基金 国家自然科学基金(批准号:50325207) 国家自然科学基金重大国际合作研究项目(批准号:50310353) 清华大学-日本丰田汽车公司国际合作研究项目(项目号:0501J08)
作者简介 联系人,E-mail:jingfeng@mail.tsinghua.edu.cn
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参考文献23

  • 1上村欣一,西田勋夫.热电半导体及其应用.东京:日刊工业新闻社,1988.56—60
  • 2栾伟玲,涂善东.温差电技术的研究进展[J].科学通报,2004,49(11):1011-1019. 被引量:25
  • 3刘静,李敬锋.热电材料的应用及研究进展[J].新材料产业,2004(8):49-53. 被引量:8
  • 4Venkatasubramanian R, Siivola E, Colpitts V, et al. Thin-film thermoelectric devices with high room-temperature figures of merit. Nature, 2001, 413(6856): 597-602
  • 5Zhou M, Feng C D, Chen L D, et al. Effects of partial substitution of Co by Ni on the thermoelectric properties of TiCoSb-based half-Heusler compounds. J Alloy Comp, 2005, 194:391-394
  • 6Zhou M, Chen L D, Feng C D, et al. Synthesis and electrical transport properties of TiCo1-xPdxSb half-Heusler compounds. Key Eng Mater, 2005, 280-283: 405-407
  • 7Hicks L D, Harman T C, Sun X S, et al. Experimental study of the effect of quantum-well structures on the thermoelectric figure of merit. Phys Rev B, 1996, 53:R10493-R10496
  • 8Zheng X J, Zhu L L, Zhou Y H, et al. Impact of grain sizes on phonon thermal conductivity of bulk thermoelectric materials.Appl Phys Lett, 2005, 87(24): 242101-242103
  • 9Rowe D M. CRC Handbook of Thermoelectrics. New York: CRC Press, 1995.257-259, 261-266
  • 10Sales B C, Mandrus D, Williams R K. Filled skutterudite antimonides: A new class of thermoelectric materials. Science, 1996, 272:1325-1328

二级参考文献50

  • 1余柏林,唐新峰,祁琼,张清杰.CoSb_3纳米热电材料的制备及热传输特性[J].物理学报,2004,53(9):3130-3135. 被引量:16
  • 2倪秋芽.太阳热直接发电技术的进展[J].科技导报,1996,14(5):63-64. 被引量:3
  • 3Kyeo H-K, Khajetoorians A A , Shi L, et al. Profiling the thermoelectric power of semiconductor junctions with nanometer resolution. Science, 2004, 303:816~818
  • 4Hsu K F, Loo S, Fuo F, et al. Cubic AgPb,,,SbTe2+m: bulk thermoelectric materials with high figure of merit. Science, 2004, 303:818~821
  • 5Harman T C, Taylor P J, Walsh M P, et al. Quantum dot superlattice thermoelectric materials and devices. Science, 2002, 297:2229~2232
  • 6Venkatasubramanian R, Siivola E, Colpitts T, et al. Thin-film thermoelectric devices with high room-temperature figures of merit. Nature, 2001,413:597~602
  • 7Chung D, Hogan T, Brazis P, et al. CsBi4Te6: a high-performance thermoelectric material for Iow-temperature applications. Science,2000, 287:1024~1027
  • 8DiSalvo F J. Thermoelectric cooling and power generation. Science, 1999, 285:703~706
  • 9Tritt T M. Thermoelectric materials: holey and unholey semiconductors. Science, 1999, 283:804~805
  • 10Nolas G S, Morelli D T, Tritt T M. Skutterudites: a phonon-glass-electron crystal approach to advanced thermoelectric energy conversion applications. Annu Rev Mater Sci, 1999, 29:89~116

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