摘要
GaAs/AlGaAs量子阱红外探测器由于其所依据的GaAs基材料较为成熟的材料生长和器件制备工艺,使其特别适合于高均匀性、大面积红外焦平面的应用。报道了甚长波256×1元GaAs/AlGaAs多量子阱红外焦平面器件的研制成果,探测器的峰值波长为15μm,响应带宽大于1.5μm。在40 K工作温度下,器件的平均黑体响应率Rp=3.96×106 V/W,平均黑体探测率为Db*=1.37×109 cm.Hz1/2/W,不均匀性为11.3%,并应用研制的器件获得了物体的热像图。
Based on the advantages in mature GaAs material growth and its device processing technology, the GaAs/AIGaAs quantum well infrared photodetectors （QWIP） are suitable for high uniform, large area FPAs. The laboratory production of a 256×1 very long wavelength focal plane array （FPA） is reported. The spectral response peak was at 15 μm and response bandwidth was larger than 1.5μm. The measured average peak responsivity, peak detectivity and nonuniformity were 3.96×10^6 V/W, 1.37×10^9 cm·Hz^1/2/W and 11.3% at 40 K, respecitively. The infrared image was also obtained by the FPA.
出处
《红外与激光工程》
EI
CSCD
北大核心
2006年第6期756-758,共3页
Infrared and Laser Engineering
基金
国家自然科学基金资助项目(10374095)
上海市AM基金(0306)
上海市启明星资助项目(03QA14059)
关键词
量子阱
焦平面
甚长波
红外探测器
QWlP
FPAs
Very long wavelength
Infrared detector
作者简介
李宁（1968-），男，广西柳州人，副研究员，主要从事红外探测器以及焦平面器件研究。Email：ningli@mail．sitp．ac．cn
