摘要
对不同类型和型号的国产及进口双极晶体管和运算放大器的不同剂量率的辐照效应及退火特性进行了研究。结果表明:在辐照的剂量率范围内,无论是国产还是进口的双极晶体管,都有明显的低剂量率辐照损伤增强现象,且NPN管比PNP管明显。双极运算放大器的研究结果显示:不同电路间的辐照响应差异很大,对有些电路而言,剂量率越低,损伤越大。有些电路虽有不同剂量率的辐照损伤差异,但这种差异可通过室温退火得到消除,因而只是时间相关的效应。文中对引起双极器件辐照损伤差异的机理进行了探讨。
Radiation effects and annealing characteristics have been investigated on different type of domestic and/or imported bipolar operational amplifiers and transistors at five dose rates ranging from 100 to 0. 002rad（Si）/s for the same total doses. The results show that enhanced low-dose-rate sensitivity（ELDRS） exists in both domestic and imported bipolar transistors, and the NPN transistors are more obvious than PNP transistors. ELDRS also exists for the bipolar op-amps. But different from bipolar transistors, some of them show that the lower the radiation dose rate was applied, the less the devices were damaged, and the damage induced by high dose rate irradiation can be eliminated by a long time annealing at room temperature. Possible mechanism for these effects is discussed.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2006年第4期471-476,共6页
Research & Progress of SSE
作者简介
任迪远（REN Diyuan）男，1950年生，中科院新疆理化技术研究所研究员，所长。主要从事半导体器件和电路的抗辐射电子学方面的研究。E-mail：llyyth@sina．com
陆妩（LU Wu）女，1962年生，新疆大学物理系理学硕士，中科院新疆理化技术研究所副研究员。主要从事微电子器件和线性集成电路的辐射效应、损伤机理及抗辐射加固技术的研究。
