摘要
用密度泛函理论方法对半导体二元微团簇GaxPy和GaxPy-(x+y=8)的几何结构、电子态、能量等进行了计算,在B3LYP/6-311+G(2df)水平下完成结构优化和频率分析.讨论了电荷诱导结构发生变化情况,与中性团簇相比,在阴离子团簇中,Ga—P键较P—P键有利于形成.预测了未知Ga1P7-、Ga2P6-、Ga3P5-、Ga6P2-和Ga7P1-化合物的最稳定结构存在的可能性,得出在GaxPy和GaxP-y(x+y=8)中,Ga4P4和Ga4P4-比较稳定.给出了两种能差即绝热电子亲合势(ΔEAEA)和垂直电离能(ΔEVDE),并与相关文献作比较.Ga4P4和Ga5P3的绝热电子亲合势与实验值相当吻合.布居分析表明,磷化镓团簇的成键属于混合键型.
Structure, electronic state, and energy of semiconductor binary micro-clusters, GaxPy and GaxPy^-, having eight atoms have been computed using density functional theory （DFT） method. Structural optimization and frequency analysis are performed at the B3LYP/6-311＋G（2df） level. The charged-induced structural changes of these anions have been discussed. The strong Ga-P bond is favored over the P-P bond in GaxPy^- （x＋y=8）, in comparison with the corresponding neutral cluster. The calculations predict the existence of previously unknown isomers （i.e. Ga1P7^-、Ga2P6^-、Ga3P5^-、Ga6P2^- and Ga7P1^-. Among different GaxPy and GaxPy^- （x＋y=8） clusters, Ga4P4 and Ga4P4^- are more stable. Two types of energy separations are reported in this study, adiabatic electron affinities （△EAEA） and vertical detachment energies （△EVDE）, wherever applicalde, and are compared with those described in other published data in the literature. Adiabatic electron affinities for Ga4P4 and Ga5P3 are in good agreement with those obtained in the experiments. Mulliken population analyses indicate that the bonding in GaP clusters is of a mixed type.
出处
《物理化学学报》
SCIE
CAS
CSCD
北大核心
2006年第10期1253-1259,共7页
Acta Physico-Chimica Sinica
基金
山西省青年基金(20051011)资助项目
关键词
密度泛函理论
GaxPy和GaxPy^-团簇
布居分析
垂直电离能
绝热电子亲合势
Density functional theory, GaxPy and GaxPy^- clusters, Mulliken population analysis, Vertical detachment energies, Adiabatic electron affinities
作者简介
Correspondent, E-mail ： wuhs@mail.sxtu.edu.cn; Tel ： 0357-2051375, Fax ：0357-2051375.
