摘要
以RuCl3.xH2O的水溶液为电沉积溶液,通过恒流电沉积法在钽箔上电沉积一层RuO2.nH2O薄膜,研究退火温度对RuO2.nH2O薄膜的电容性能的影响;采用CHI660B电化学测试仪和循环伏安法对薄膜的电容性能进行测试;分别采用扫描电子显微电镜、能谱仪及X射线衍射仪对薄膜的形貌和微孔形态、薄膜元素及薄膜的物相进行分析。结果表明,未经退火处理的RuO2.nH2O薄膜的电容性能不稳定,在循环伏安法测试中电容量随循环次数的增加而降低;将RuO2.nH2O薄膜分别在不同温度(100,150,200,250和300℃)下进行的2 h的退火处理,经退火处理后的RuO2.nH2O薄膜的电容性能经过60次的循环后趋于稳定,其中,经过100℃退火处理的RuO2.nH2O薄膜的比电容最大,其比电容为0.083 8 F/cm2。
RuO2 · nH2O films used as cathode of supercapacitor were deposited on tantalum foils in water solution of RuCl3 · xH2O by galvanostatic technique. The effect of annealing temperature on the capacitance of RuO2 · nH2O films was studied by using an electrochemical system of CHI660B. The micrograph, element and structure of RuO2 · nH2O films were respectively analyzed by scanning electron microscopy, energy dispersive spectroscopy and X-ray diffractrometer. The results show that the capacitance of RuO2 ·nH2O films unannealed is unstable. Annealing at temperatures of 100, 150, 200, 250 and 300℃ for 2 h respectively, the capacitance of RuO2 · nH2O becomes stable after 60 cycles. The specific capacitance of RuO2 · nH2O films annealed at 100 ℃reaches the maximum of 0. 0838 F/cm^2.
出处
《中南大学学报（自然科学版）》
EI
CAS
CSCD
北大核心
2006年第4期660-664,共5页
Journal of Central South University:Science and Technology
基金
国防科学技术工业委员会资助项目(2004-1-102)
作者简介
通讯作者：甘卫平（1955-），男，湖南桃源人，教授，从事电子及信息功能材料研究 电话：0731—8830248（0）；E-mail：gwp@mail．csu．edu．cn
