摘要
利用等离子增强化学气相沉积(PECVD)技术,研究了H稀释度D=H 2/(H 2+SiH 4)对在玻璃和不锈钢衬底上低温制备微晶硅薄膜的晶化率、晶粒尺寸、薄膜质量等的影响。结果表明,随着硅烷浓度的降低,样品的晶化率、晶粒尺寸有所改变。当D=99%时,晶粒突然变大,晶化率显著提高。因此,我们认为此时的硅薄膜由非晶硅转化为微晶硅。
By PECVD deposition technology, we mainly investigated the influence of hydrogen dilution on glass/steel-based intrinsic amorphous/microcrystalline silicon thin film prepared at 300 ℃.We study the crystallization ratio, grain size of the Silicon thin film specially. The results reveal that the crystallization ratio ,grain size of the Silicon thin film changed along with D, which changed sharply when the D=99%.On this We think the Si thin film changed from a-Si into u-Si.
出处
《可再生能源》
CAS
2006年第4期18-20,共3页
Renewable Energy Resources
关键词
PECVD
氢稀释
微晶硅薄膜
plasma enhanced chemical vapor deposition （PECVD）
H2 dilution
microcrystalline silicon
作者简介
王生钊（1980-），男，汉族，河南南阳人，硕士研究生，研究方向为半导光电子材料与器件技术。
