摘要
本文介绍了一种用SOI硅片和硅?硅键合MEMS技术制作的高温接触式电容压力传感器,并给出了详细的工艺制作流程。在对测试装置、测试电路进行了详细地介绍和深入分析后,用此测试电路对制作的传感器器件进行了高温测试。测试结果表明,传感器在小于250kPa的室温条件下工作,传感器的灵敏度为0.54 mV/kPa;而在400℃条件下工作,传感器的灵敏度为0.41 mV/kPa,传感器的零点飘移为0.1mV/℃。可见这种微传感器可在低于450℃的条件下正常工作,且具有很大的线性工作范围、良好的稳定性和较高的灵敏度。
This paper introduces the MEMS high temperature capacitive pressure sensor, which uses SOI wafer and combines a touch-mode structure and the silicon-silicon fusion bonding technique. The production technology is given in detail. The test equipment and test circuit are also introduced and analyzed in detail. The produced capacitive pressure sensors were tested in high temperature. The test results show that in the linear operation range of 250 kPa, at room temperature, the sensitivity is 0.54 mV/kPa. At 400℃ a sensitivity of 0.41mV/kPa is achieved, and the zero drift is about 0.1mV/C. That means this type of sensor works well under 450℃, and has excellent linearity, good stability and high sensitivity.
出处
《仪器仪表学报》
EI
CAS
CSCD
北大核心
2006年第7期804-807,共4页
Chinese Journal of Scientific Instrument
作者简介
冯勇建 男 1958年出生 工学博士 副教授 主要研究方向为微传感器 微执行器及IC电路设计。E-mail：yjfeng@xmu．edu．cn
