摘要
针对高损耗硅衬底,基于部分元等效电路方法和全耦合变压器模型,建立了一种新的片上螺旋电感物理模型.该模型考虑了趋肤效应、邻近效应和衬底涡流损耗对螺旋电感中串联电感和串联电阻频率特性的制约,并通过2π等效电路结构计入了电感中寄生电容的分布特性.通过与全波分析方法对比,验证了在15GHz范围内由该模型导出的等效电感、等效电阻和Q值误差均在8%以内.该模型可望用于硅基射频集成电路中电感的优化设计和进一步的理论探讨.
A novel physical model is proposed for monolithic RF spiral inductor on high-loss silicon substrate. This model takes the following factors into account： the functions of skin effect, proximity effect,and eddy current losses in the substrate to frequency-dependent series parameters Ls and Rs in light of modified partial equivalent element circuit methodology and a full-coupled transformer loop. Also, distributed characteristics of parasitic capacitance are captured by a 27 equivalent-circuit. Up to 15GHz, the model is quite accurate. The results are within 8% of data from a full-wave electromagnetic field simulator,including equivalent inductor Leff, resistor Reff, and quality factor Q. Hopefully,it can be applied to further theory research and optimum design of RFIC spiral inductors on Si.
基金
国防重点基金资助项目(批准号:6140449)~~
作者简介
杨帆,通信作者.Email：yangfan327@163.com
