摘要
La掺杂BaTiO_3陶瓷的介电常数在0.40at％La含量内随掺La量呈现倒U型变化,在1kHz内随频率增加急剧减小,之后随频率变化缓慢,介电性的这些变化起因于掺La引起的如下缺陷变化:独立的Ba空位型复合缺陷型复合缺陷。
The dielectric permittivity of La-doped BaTiO3 ceramics exhibits reverse U-shape variation with increasing La-content in the range of 0.4 at% La, and with increasing frequency f it decreases quickly for f≤1000 Hz and changes very slowly for f>1000 Hz. These variations of dielectric property result from variation of defects due to doping La as follows: isolated Ba-vacancy ( V''_(Ba)→ associated defect (La_(Ba)·V'_(Ba)→(La_(Ba)·V''_(Ba)·La_(Ba).
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1996年第7期1220-1224,共5页
Acta Physica Sinica
