摘要
研究了Ta2O5和Nb2O5掺杂对TiO2系压敏陶瓷电性能的影响。采用电子陶瓷制备工艺,制备了两组TiO2系压敏陶瓷,借助热电子发射理论,分析了样品的I-V特性及介电频谱特性。结果发现,Ta2O5掺杂的样品具有最低的压敏电压(E10mA=5.03 V.mm–1)和最大的视在介电常数(εra=1.5×105)。
The influences of Ta2O5 and Nb2O5 on the electrical properties of TiO2-based varistor ceramics were studied, The TiO2-based varistor ceramics doped with donor Ta2O5 and Nb2O5 were prepared respectively by electric ceramic preparing technique. The main electrical properties such as I-V characteristic and dielectric spectra of these samples were analyzed and compared by thermal electron emitting mechanism. The results show that the sample doped with Ta2O5 exhibits the lowest breakdown voltage （E10mA= 5.03 V · mm^-1） and the biggest apparent dielectric constant （εm=1.5×10^5）.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2006年第2期28-30,共3页
Electronic Components And Materials
基金
广州市教育局科技计划资助项目(重点01-2)
关键词
电子技术
TIO2压敏陶瓷
压敏电压
非线性系数
视在介电常数
electronic technology
TiO2 varistor ceramics
breakdown voltage
nonlinear coefficient
apparent dielectric constant
作者简介
通讯作者：朱道云（1975-），女，河南南阳人，博士研究生，研究方向为电子功能材料及薄膜材料。Tel：（020）84113398；E-mail：zhudaoyun@sohu．com。
