摘要
采用电子束蒸发和键合技术,制作了具有高反射率的、表面为薄层单晶Si的分布Bragg反射器。用标准光刻工艺在单晶Si薄层上制作出窄带谐振腔增强型(RCE)金属-半导体-金属(MSM)光电探测器,响应峰值波长分别在836、900、965和1 030 nm处,其中在900 nm处峰值半高宽为18 nm。该器件具有波长选择特性,可有效抑制相邻频道间的串扰,而且容易制成集成面阵。
Si distributed Bragg reflector with crystal Si thin film on the reflector was fabricated by electron beam evaporation and bonding techniques. Narrow band Si resonant-cavity -enhanced（RCE） metal-semiconductor-metal（MSM） photodetoctors were fabricated by standard photolithography with responsivity peaks at 836 nm,900 nm,965 nm and 1030 nm respectively. The full-width-at-half-maximum was about 18 nm at 900 nm. The wavelength selectivity of the device could eliminate crosstalk between channels, and the integrated array could be easily realized.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2006年第1期62-64,共3页
Journal of Optoelectronics·Laser
基金
福建省青年科技人才创新资助项目(2004J021)
关键词
Si光电探测器
谐振腔
键合
Si photodetectors
resonant cavity
wafer bonding
作者简介
李成，E-mail：1ich@xmu．edu．cn
