摘要
用高温固相法合成了具有缺陷发光的溴氧化镧基质。对样品进行了X-射线衍射、荧光光谱和热释光谱的测试。荧光光谱分析得出在1000℃合成溴氧化镧基质在350nm到500nm存在两个宽带发射,通过与LaOF、LaOCl的荧光光谱和热释光谱对比,得出溴氧化镧基质的发光归结于溴的缺陷,通过计算发现两种不同类型的缺陷能级分别为0.74eV,0.70eV。
The host of LaOBr, which has defect luminescence, was synthesized by high- temperature solid-state method. The XRD, photoluminescence and thermoluminescence were studied. Two band emission located in 400 nm and 450 nm were observed, and it was concluded that the band emissions were due to the defects of bromine comparing the fluoscence and thermally luminescence with LaFO, LaCIO. The trap energies produced by bromine near （LaO）n^n＋ which have different structure, were calculated to be 0.74 eV, 0.70 eV.
出处
《广州化学》
CAS
2005年第4期1-3,8,共4页
Guangzhou Chemistry
基金
国家自然科学基金资助项目(20171018
50472077)
广东省自然科学基金资助项目(36706
013201)
关键词
缺陷发光
溴氧化镧
热释光谱
luminescence of defect, LaOBr, thermoluminescence
作者简介
张俊文（1981-），男，湖北省武穴人，硕士研究生，主要从事发光材料研究。
通讯联系人，E-mail：tliuyl@jnu．edu．cn
